NPN aided fast switching insulated gate bipolar transistor with a p-buffer layer
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چکیده
منابع مشابه
NPN aided fast switching insulated gate bipolar transistor with a p-buffer layer
A novel insulated gate bipolar transistor (IGBT) entitled NPN aided fast switching IGBT (NFS-IGBT) with a P-buffer layer is presented, which enhances the switching speed greatly. Compared with the conventional IGBT, double sided NPN structure is incorporated into the anode to facilitate the turn-off process. The proposed structure is verified by two-dimensional mixed device-circuit simulation, ...
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2014
ISSN: 1349-2543
DOI: 10.1587/elex.11.20140294